Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn_1-xGa_x Solid Solution

<span>Features of structural, electrokinetic, and energy state characteristics of ZrNiSn</span>_1-x<span>Ga</span>_x<span> semiconductive solid solution were investigated in the temperature ranges Рў = 80 - 400 K and С… = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d</span>²<span>5s</span>²<span>) atoms in 4a sites by Ni (3d</span>⁸<span>4s</span>²<span>) ones up to ~ 1 % was confirmed. It generated donor levels band </span>_{<span style="font-size: medium;"><img src="http://www.pu.if.ua/inst/phys_che/start/pcss/vol18/images/anote1801_06_htm_eqn18111.gif" border="0" alt="" /></span>D1}<span> in the band gap. It was shown that introduction of Ga (4s</span>²<span>4p</span>¹<span>) atoms by means of substitution of Sn (5s</span>²<span>5p</span>²<span>) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band </span><img src="http://www.pu.if.ua/inst/phys_che/start/pcss/vol18/images/anote1801_06_htm_eqn18383.gif" border="0" alt="" />_Рђ<span>. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band </span><img src="http://www.pu.if.ua/inst/phys_che/start/pcss/vol18/images/anote1801_06_htm_eqn18478.gif" border="0" alt="" />_D2<span> (donor-acceptor pair took place). Keywords: crystal and electronic structures, conductivity, thermopower coefficient.</span>