News Help Institutional access
Back to results
Bibliographic record · Consultation and access
Artículo

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

V. M. Sklyarchuk et al · Vasyl Stefanyk Carpathian National University · 2019

Open-access full text
Quick overview. Review the resource’s basic details, then access the content using the main button. This page shows only the information needed to identify, cite, and open the work.
Author / responsible party
V. M. Sklyarchuk et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2019
ISSN
1729-4428
ISSN
1729-4428
Language
English

Resource access

Open the content from the main option or choose another available source.

DOAJ DOAJ Articles
Entrar por DOAJ
Main access

Open-access full text

Texto completo identificado como acceso abierto.
Open text

Summary

Descripción general del contenido del recurso.

<p>The electrical characteristics of In-doped Cd<sub>0.9</sub>Zn<sub>0.1</sub>Te (CZT:In) crystals with concentration of С<sub>о</sub>=3,5*10<sup>17</sup> cm<sup>-3</sup>, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced n-type conductivity and had a resistivity of (1¸2)*10<sup>9</sup> Ohm*cm at 293 K. In/CZT:In/In structures with ohmic contacts and Cr/CZT:In/In structures with Schottky barriers were created on this crystals. The temperature dependences of the resistivity in investigated material were analyzed and explained. The energy position of the deep level responsible for the material’ dark conductivity was found. Due to the study of the temperature dependence of currents limited by space-charge (SCLC) and of currents of the ohmic section of the volt-ampere characteristics (<em>I-VC</em>), the compensation degree of CZT:In crystals is determined. It was found that Cr/CZT:In/In structures with a Schottky diode, fabricated on crystals with a lower compensation degree, possessed the best detection properties than similar structures fabricated on crystals with a greater compensation degree.</p>

How to cite

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

al, V. M. S. E. (2019). Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals. https://doi.org/10.15330/pcss.20.3.257-263

MLA

al, V. M. Sklyarchuk et. "Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals." 2019. https://doi.org/10.15330/pcss.20.3.257-263.

Chicago

al, V. M. Sklyarchuk et. 2019. "Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals.". https://doi.org/10.15330/pcss.20.3.257-263.

Harvard

al, V. M. S. E. 2019, Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.20.3.257-263 [Accessed 5 Aug. 2026].

Share and print

Save the record, copy its permanent link, or print it as a PDF.

Export reference

You can export the record in common formats for use in a reference manager.

RIS BibTeX

Resource details

Bibliographic information to help confirm that this is the correct material.

Title
Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals
Author / contributors
V. M. Sklyarchuk et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2019
ISSN
1729-4428
ISSN
1729-4428
Language
English

Subjects

Explore related resources through these subjects.

cd0.9zn0.1te:in омічний контакт струми сопз ступінь компенсації контакт шотткі
Copied