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The condition requirements for optical bistability in semiconductor laser under injection locking

A. I. Abdullah et al · University of Mosul, College of Education for Pure Science · 2008

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Abstract<br /> The experimental fulfillment for optical bistability in a semiconductor laser under injection locking is studied. The required setup to provide the stability in current, temperature and power output of the laser diode used in experiments has been described in detail. A small change in the injection power of the slave laser SL could induce a dynamic change of the lasing power of the master laser ML has been observed. Optical bistability for two non identical laser was possible has been experimentally observed.

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APA 7

al, A. I. A. E. (2008). The condition requirements for optical bistability in semiconductor laser under injection locking. https://doi.org/10.33899/edusj.2008.56043

MLA

al, A. I. Abdullah et. "The condition requirements for optical bistability in semiconductor laser under injection locking." 2008. https://doi.org/10.33899/edusj.2008.56043.

Chicago

al, A. I. Abdullah et. 2008. "The condition requirements for optical bistability in semiconductor laser under injection locking.". https://doi.org/10.33899/edusj.2008.56043.

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al, A. I. A. E. 2008, The condition requirements for optical bistability in semiconductor laser under injection locking, University of Mosul, College of Education for Pure Science, available at: https://doi.org/10.33899/edusj.2008.56043 [Accessed 10 Aug. 2026].

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Title
The condition requirements for optical bistability in semiconductor laser under injection locking
Author / contributors
A. I. Abdullah et al
Publisher
University of Mosul, College of Education for Pure Science
Publication year
2008
ISSN
1812-125X
ISSN
1812-125X
Language
English

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