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Investigation of V<sub>1-x</sub>Ti<sub>x</sub>FeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure

V. V. Romaka et al · Vasyl Stefanyk Carpathian National University · 2016

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The peculiarities of the crystal and electronic structure of V<sub>1-x</sub>Ti<sub>x</sub>FeSb, х = 0 – 0,20, semiconductor solid solution were investigated. The mechanism of generation of structural defects of acceptor and donor nature is described. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence ofvacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion. <br /><strong>Keywords:</strong> semiconductor, electrical conduction, electronic structure.

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APA 7

al, V. V. R. E. (2016). Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure. https://doi.org/10.15330/pcss.16.2.335-340

MLA

al, V. V. Romaka et. "Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure." 2016. https://doi.org/10.15330/pcss.16.2.335-340.

Chicago

al, V. V. Romaka et. 2016. "Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure.". https://doi.org/10.15330/pcss.16.2.335-340.

Harvard

al, V. V. R. E. 2016, Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.16.2.335-340 [Accessed 8 Aug. 2026].

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Title
Investigation of V<sub>1-x</sub>Ti<sub>x</sub>FeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure
Author / contributors
V. V. Romaka et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2016
ISSN
1729-4428
ISSN
1729-4428
Language
English
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