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An advanced III-V-on-silicon photonic integration platform

Yingtao Hu et al · Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China · 2021

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Author / responsible party
Yingtao Hu et al
Publisher
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
Year
2021
ISSN
2096-4579
ISSN
2096-4579
Language
English

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In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.

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APA 7

al, Y. H. E. (2021). An advanced III-V-on-silicon photonic integration platform. https://doi.org/10.29026/oea.2021.200094

MLA

al, Yingtao Hu et. "An advanced III-V-on-silicon photonic integration platform." 2021. https://doi.org/10.29026/oea.2021.200094.

Chicago

al, Yingtao Hu et. 2021. "An advanced III-V-on-silicon photonic integration platform.". https://doi.org/10.29026/oea.2021.200094.

Harvard

al, Y. H. E. 2021, An advanced III-V-on-silicon photonic integration platform, Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China, available at: https://doi.org/10.29026/oea.2021.200094 [Accessed 8 Aug. 2026].

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Title
An advanced III-V-on-silicon photonic integration platform
Author / contributors
Yingtao Hu et al
Publisher
Editorial Office of Opto-Electronic Journals Group, Institute of Optics and Electronics, CAS, China
Publication year
2021
ISSN
2096-4579
ISSN
2096-4579
Language
English

Subjects

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si photonics; iii-v-on-si laser; photonic integration; epitaxy regrowth
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