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The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors

Salar A. Mawlood · University of Mosul, College of Education for Pure Science · 2026

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In this study, we examine the high-pressure energy bandgap of several photocatalyst semiconductors (ZnO, MgO, CdO, WO3, CaO, SnO2, In2O3, ZrO2, ZnS, and TiO2) by applying the Angilella equation. This equation helps analyze the change in energy gap with pressure, relative to the variation in lattice constant. The Murnaghan equation of state (EOS) was used to calculate the pressure. The validity of the Angillela equation is confirmed only for cubic ZnO, wurtzite MgO, and rock salt CdO, but for other semiconductors(WO3, CaO, SnO2, In2O3, ZrO2, ZnS, and TiO2), it is found that the Angillela equation is not valid precisely. Our results indicate that the energy gap of these photocatalyst semiconductors behaves similarly to that of other semiconductors under high pressure, with an increase in energy gap as pressure rises. Additionally, our results reveal that the lattice constant decreases as pressure is applied for all photacatalyst semiconductors used in this work.

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APA 7

Mawlood, S. A. (2026). The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors. https://doi.org/10.33899/jes.v35i1.60276

MLA

Mawlood, Salar A. "The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors." 2026. https://doi.org/10.33899/jes.v35i1.60276.

Chicago

Mawlood, Salar A. 2026. "The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors.". https://doi.org/10.33899/jes.v35i1.60276.

Harvard

Mawlood, S. A. 2026, The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors, University of Mosul, College of Education for Pure Science, available at: https://doi.org/10.33899/jes.v35i1.60276 [Accessed 9 Aug. 2026].

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Title
The Effect of High Pressure on the Energy Gap in Photocatalytic Semiconductors
Author / contributors
Salar A. Mawlood
Publisher
University of Mosul, College of Education for Pure Science
Publication year
2026
ISSN
1812-125X
ISSN
1812-125X
Language
English

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