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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

B. Andrei Bernevig; Taylor L. Hughes; Shou-Cheng Zhang · Science · 2006

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We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

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APA 7

Bernevig, B. A, Hughes, T. L, & Zhang, S. C. (2006). Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells. https://doi.org/10.1126/science.1133734

MLA

Bernevig, B. Andrei, et al. "Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells." 2006. https://doi.org/10.1126/science.1133734.

Chicago

Bernevig, B. Andrei, Taylor L. Hughes, and Shou-Cheng Zhang. 2006. "Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells.". https://doi.org/10.1126/science.1133734.

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Bernevig, B. A, Hughes, T. L. and Zhang, S. C. 2006, Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells, Science, available at: https://doi.org/10.1126/science.1133734 [Accessed 8 Aug. 2026].

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Title
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
Author / contributors
B. Andrei Bernevig; Taylor L. Hughes; Shou-Cheng Zhang
Publisher
Science
Publication year
2006
Language
English

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