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Formation of submicron relief structures on the surface of sapphire substrates

V.V. Petrov et al · Vasyl Stefanyk Carpathian National University · 2023

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Author / responsible party
V.V. Petrov et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2023
ISSN
1729-4428
ISSN
1729-4428
Language
English

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An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed.

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APA 7

al, V. P. E. (2023). Formation of submicron relief structures on the surface of sapphire substrates. https://doi.org/10.15330/pcss.24.2.298-303

MLA

al, V.V. Petrov et. "Formation of submicron relief structures on the surface of sapphire substrates." 2023. https://doi.org/10.15330/pcss.24.2.298-303.

Chicago

al, V.V. Petrov et. 2023. "Formation of submicron relief structures on the surface of sapphire substrates.". https://doi.org/10.15330/pcss.24.2.298-303.

Harvard

al, V. P. E. 2023, Formation of submicron relief structures on the surface of sapphire substrates, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.24.2.298-303 [Accessed 10 Aug. 2026].

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Title
Formation of submicron relief structures on the surface of sapphire substrates
Author / contributors
V.V. Petrov et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2023
ISSN
1729-4428
ISSN
1729-4428
Language
English

Subjects

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sapphire substrates; selective etching; microrelief structures; protective mask; direct laser recording
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