News Help Institutional access
Back to results
Bibliographic record · Consultation and access
Artículo

Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

S. P. Novosyadlyi et al · Vasyl Stefanyk Carpathian National University · 2016

Open-access full text
Quick overview. Review the resource’s basic details, then access the content using the main button. This page shows only the information needed to identify, cite, and open the work.
Author / responsible party
S. P. Novosyadlyi et al
Publisher
Vasyl Stefanyk Carpathian National University
Year
2016
ISSN
1729-4428
ISSN
1729-4428
Language
English

Resource access

Open the content from the main option or choose another available source.

DOAJ DOAJ Articles
Entrar por DOAJ
Main access

Open-access full text

Texto completo identificado como acceso abierto.
Open text

Summary

Descripción general del contenido del recurso.

<p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).</span></p> <p class="ArticleAnnotation"><strong><span lang="EN-US">Keywords:</span></strong><span lang="EN-US"> super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.</span></p>

How to cite

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

al, S. P. N. E. (2016). Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS. https://doi.org/10.15330/pcss.16.3.599-605

MLA

al, S. P. Novosyadlyi et. "Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS." 2016. https://doi.org/10.15330/pcss.16.3.599-605.

Chicago

al, S. P. Novosyadlyi et. 2016. "Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS.". https://doi.org/10.15330/pcss.16.3.599-605.

Harvard

al, S. P. N. E. 2016, Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.16.3.599-605 [Accessed 8 Aug. 2026].

Share and print

Save the record, copy its permanent link, or print it as a PDF.

Export reference

You can export the record in common formats for use in a reference manager.

RIS BibTeX

Resource details

Bibliographic information to help confirm that this is the correct material.

Title
Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Author / contributors
S. P. Novosyadlyi et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2016
ISSN
1729-4428
ISSN
1729-4428
Language
English
Copied