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Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method

Y. V. Tur et al · Vasyl Stefanyk Carpathian National University · 2019

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For the analysis of the measurement of thermoelectric parameters of semiconductors, the Harman pulsed method was used. The authors propose a new approach to determine the thermoelectric quality factor of thin semiconductor films in the temperature interval (300 ÷ 500) K by directly measuring a series of electric circuit parameters. The theory of the method is described in detail and its application in the measurement methodology. The dependences of electrical quantities on the time, namely voltage – V(t), are investigated at different values of current pulses for thin films PbTe<Tl> grown by the pulsed laser deposition.

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APA 7

al, Y. V. T. E. (2019). Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method. https://doi.org/10.15330/pcss.20.3.306-310

MLA

al, Y. V. Tur et. "Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method." 2019. https://doi.org/10.15330/pcss.20.3.306-310.

Chicago

al, Y. V. Tur et. 2019. "Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method.". https://doi.org/10.15330/pcss.20.3.306-310.

Harvard

al, Y. V. T. E. 2019, Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.20.3.306-310 [Accessed 9 Aug. 2026].

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Title
Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method
Author / contributors
Y. V. Tur et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2019
ISSN
1729-4428
ISSN
1729-4428
Language
English

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