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Investigation of Band Structure of ZrNiSn<sub>1-x</sub>Ga<sub>x</sub> Semiconductor Solid Solution

L. P. Romaka et al · Vasyl Stefanyk Carpathian National University · 2018

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<span>The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn</span><sub>1-x</sub><span>Ga</span><sub>x</sub><span> semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn</span><sub>1-x</sub><span>Ga</span><sub>x</sub><span> showed that the speed of movement of Fermi level ε</span><sub>F</sub><span>, obtained from the band structure calculations is in agreement with experimental extracted from lnρ(1/T) dependencies. It is shown that with substitution of Sn (5s</span><sup>2</sup><span>5p</span><sup>2</sup><span>) with Ga (4s</span><sup>2</sup><span>4p</span><sup>1</sup><span>) atoms in 4b crystallographic site both acceptor and donor (vacancies in 4b site) defects are generated. </span><br /><strong>Keywords:</strong><span> crystal and electronic structures, conductivity, thermopower coefficient.</span>

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APA 7

al, L. P. R. E. (2018). Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution. https://doi.org/10.15330/pcss.18.2.187-193

MLA

al, L. P. Romaka et. "Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution." 2018. https://doi.org/10.15330/pcss.18.2.187-193.

Chicago

al, L. P. Romaka et. 2018. "Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution.". https://doi.org/10.15330/pcss.18.2.187-193.

Harvard

al, L. P. R. E. 2018, Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.18.2.187-193 [Accessed 10 Aug. 2026].

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Title
Investigation of Band Structure of ZrNiSn<sub>1-x</sub>Ga<sub>x</sub> Semiconductor Solid Solution
Author / contributors
L. P. Romaka et al
Publisher
Vasyl Stefanyk Carpathian National University
Publication year
2018
ISSN
1729-4428
ISSN
1729-4428
Language
English
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