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Optoelectronics with single layer group-VIB transition metal dichalcogenides

Khan M.A. et al · Wiley · 2018

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The discovery of two-dimensional (2D) materials has opened up new frontiers and challenges for exploring fundamental research. Recently, single-layer (SL) transition metal dichalcogenides (TMDCs) have emerged as candidate materials for electronic and optoelectronic applications. In contrast to graphene, SL TMDCs have sizable band gaps that change from indirect to direct in SLs, which is useful in making thinner and more efficient electronic devices, such as transistors, photodetectors, and electroluminescent devices. In addition, SL TMDCs show strong spin-orbit coupling effects at the valence band edges, giving rise to the observation of valley-selective optical excitations. Here, we review the basic electronic and optical properties of pure and defected group-VIB SL TMDCs, with emphasis on the strong excitonic effects and their prospect for future optoelectronic devices.

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APA 7

al, K. M. E. (2018). Optoelectronics with single layer group-VIB transition metal dichalcogenides. https://doi.org/10.1515/nanoph-2018-0041

MLA

al, Khan M.A. et. "Optoelectronics with single layer group-VIB transition metal dichalcogenides." 2018. https://doi.org/10.1515/nanoph-2018-0041.

Chicago

al, Khan M.A. et. 2018. "Optoelectronics with single layer group-VIB transition metal dichalcogenides.". https://doi.org/10.1515/nanoph-2018-0041.

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al, K. M. E. 2018, Optoelectronics with single layer group-VIB transition metal dichalcogenides, Wiley, available at: https://doi.org/10.1515/nanoph-2018-0041 [Accessed 8 Aug. 2026].

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Title
Optoelectronics with single layer group-VIB transition metal dichalcogenides
Author / contributors
Khan M.A. et al
Publisher
Wiley
Publication year
2018
ISSN
2192-8606
ISSN
2192-8606
Language
English

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