Effect of anodic oxidation voltage and superconductivity on the electrical properties of the metal / p-Si / SiO2 device

Abstract<br /> A device of metal-oxide –semiconductor (MOS) structure fabricated from p-Si of )100( direction by tow electrodes anodic oxidation system using HCl aqueous solution at oxidation voltage 0.5,1.0,1.5,2.0) Volt. From C-V measurements the results of the samples show clear and different variation in C-V results, this led to different behaviors when changing the oxide thickness over the oxidation voltage range for different metallic contact. From the I-V measurements in dark for all samples shows large dependence of the current on the voltage in forward bias where it was independent in the reveres biases, this is the usual characteristics of shottky diode from this the barrier high is calculated, which show different values due to different metal work function. (I-V) measurements during illumination of MOS device as a solar cells the efficiency for p-Si (100) with Al- contact is η=5% at 1.5V oxidation volt, whereas at same voltage and by using the Au-contact is η=9%.