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Electrical transport of SiNWs array after covalent attachment of new organic functionalities

Marianna Ambrico et al · SAGE Publishing · 2012

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Modification of the electrical transport of a random network of silicon nanowires assembled on n‐ silicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed. We show that the organic functionalities induce charge transfer at single SiNW and produce doping‐like effect that is kept in the random network too. The SiNWs network also presents a surface recombination velocity lower than that of bulk silicon. Interestingly, the functionalized silicon nanowires/n‐Si junctions display photo‐yield and open circuit voltages higher than those including oxidized silicon nanowire networks. Electrical properties stability in time of junctions embedding propenyl terminated silicon nanowires network and transport modification after secondary functionalization is also shown. These results suggest a possible route for the integration of functionalized Si nanowires, although randomly distributed, in stable large area photovoltaic or molecule sensitive based devices.

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APA 7

al, M. A. E. (2012). Electrical transport of SiNWs array after covalent attachment of new organic functionalities. https://doi.org/10.5772/50963

MLA

al, Marianna Ambrico et. "Electrical transport of SiNWs array after covalent attachment of new organic functionalities." 2012. https://doi.org/10.5772/50963.

Chicago

al, Marianna Ambrico et. 2012. "Electrical transport of SiNWs array after covalent attachment of new organic functionalities.". https://doi.org/10.5772/50963.

Harvard

al, M. A. E. 2012, Electrical transport of SiNWs array after covalent attachment of new organic functionalities, SAGE Publishing, available at: https://doi.org/10.5772/50963 [Accessed 8 Aug. 2026].

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Title
Electrical transport of SiNWs array after covalent attachment of new organic functionalities
Author / contributors
Marianna Ambrico et al
Publisher
SAGE Publishing
Publication year
2012
ISSN
1847-9804
ISSN
1847-9804
Language
English

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