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Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics

Azzaroni, Omar et al · IOP Publishing · 2023

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The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor’s interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers. Fil: Azzaroni, Omar. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina Fil: Piccinini, Esteban. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina

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APA 7

Azzaroni, O. E. A. (2023). Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics. http://hdl.handle.net/11336/227212

MLA

Azzaroni, Omar et al. "Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics." 2023. http://hdl.handle.net/11336/227212.

Chicago

Azzaroni, Omar et al. 2023. "Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics.". http://hdl.handle.net/11336/227212.

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Azzaroni, O. E. A. 2023, Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics, IOP Publishing, available at: http://hdl.handle.net/11336/227212 [Accessed 8 Aug. 2026].

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Title
Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics
Author / contributors
Azzaroni, Omar et al
Publisher
IOP Publishing
Publication year
2023
ISSN
0957-4484
ISSN
0957-4484
Language
English

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