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ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

Golmar, Federico et al · Springer · 2010

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We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2? oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2?. The obtained negative values of the Curie?Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms. Fil: Golmar, Federico. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina

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APA 7

Golmar, F. E. A. (2010). ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?. http://hdl.handle.net/11336/246997

MLA

Golmar, Federico et al. "ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?." 2010. http://hdl.handle.net/11336/246997.

Chicago

Golmar, Federico et al. 2010. "ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?.". http://hdl.handle.net/11336/246997.

Harvard

Golmar, F. E. A. 2010, ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?, Springer, available at: http://hdl.handle.net/11336/246997 [Accessed 6 Aug. 2026].

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Title
ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?
Author / contributors
Golmar, Federico et al
Publisher
Springer
Publication year
2010
ISSN
6174-6178
ISSN
6174-6178
Language
English

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