Back to results
Bibliographic record · Consultation and access
Artículo

Tailoring the surface reactivity of silicon surfaces by partial halogenation

Soria, Federico Ariel et al · American Chemical Society · 2013

Open-access full text
Quick overview. Review the resource’s basic details, then access the content using the main button. This page shows only the information needed to identify, cite, and open the work.

Resource access

Open the content from the main option or choose another available source.

CONICET Digital CONICET Digital OAI-PMH
Entrar por CONICET Digital
Main access

Open-access full text

Texto completo identificado como acceso abierto.
Open text

Summary

Descripción general del contenido del recurso.

Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges. Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina

How to cite

Elegí el formato que necesitás y copiá la referencia al portapapeles.

APA 7

Soria, F. A. E. A. (2013). Tailoring the surface reactivity of silicon surfaces by partial halogenation. http://hdl.handle.net/11336/25838

MLA

Soria, Federico Ariel et al. "Tailoring the surface reactivity of silicon surfaces by partial halogenation." 2013. http://hdl.handle.net/11336/25838.

Chicago

Soria, Federico Ariel et al. 2013. "Tailoring the surface reactivity of silicon surfaces by partial halogenation.". http://hdl.handle.net/11336/25838.

Harvard

Soria, F. A. E. A. 2013, Tailoring the surface reactivity of silicon surfaces by partial halogenation, American Chemical Society, available at: http://hdl.handle.net/11336/25838 [Accessed 10 Aug. 2026].

Share and print

Save the record, copy its permanent link, or print it as a PDF.

Export reference

You can export the record in common formats for use in a reference manager.

Resource details

Bibliographic information to help confirm that this is the correct material.

Title
Tailoring the surface reactivity of silicon surfaces by partial halogenation
Author / contributors
Soria, Federico Ariel et al
Publisher
American Chemical Society
Publication year
2013
ISSN
1932-7447
ISSN
1932-7447
Language
English

Subjects

Explore related resources through these subjects.

Copied