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Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance

Scotto, Juliana et al · American Chemical Society · 2022

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Graphene field-effect transistors (gFETs) are promising tools for the development of precise and affordable techniques for the study of molecular binding kinetics, crucial in applications such as biomolecule therapies, drug discovery, and medical diagnostics. Nevertheless, determining the reliability and modeling the gFET signal for the monitoring of molecular binding and adsorption are still needed. Here, we prove that the gFET technology allows monitoring in real time the adsorption of both positive and negative polyelectrolytes, used as model charged macromolecules, using a low-cost portable gFET setup (Zaphyrus-W10), whose graphene channel was produced by reduction of graphene oxide. The gFET response is compared and validated against the surface plasmon resonance (SPR) technique. Remarkably, the electronic response is directly correlated with the mass adsorption, and very similar kinetic profiles are obtained for both techniques. Moreover, the adsorption kinetics of a polyelectrolyte assembled in a layer-by-layer give evidence that, even at ionic strengths near to the physiological conditions, the electrostatic interactions can be sensed at large distances from the graphene surface (20-fold higher in comparison to the solution Debye length). Biasing the gFET with a Ag/AgCl coplanar gate electrode avoids capacitive current contributions from nonbinding phenomena and displays a transistor signal proportional to the adsorbed mass. Furthermore, a marked amplification of the electronic signal without alteration of the macromolecule adsorption kinetics by using a Ag/AgCl gate in comparison with a nongated device is evidenced. Thus, the suitability of the coplanar-gated gFET technology for the study of molecular binding kinetics is illustrated. Fil: Scotto, Juliana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina Fil: Cantillo, Agustin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina. GISENS BIOTECH; Argentina

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APA 7

Scotto, J. E. A. (2022). Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance. http://hdl.handle.net/11336/203684

MLA

Scotto, Juliana et al. "Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance." 2022. http://hdl.handle.net/11336/203684.

Chicago

Scotto, Juliana et al. 2022. "Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance.". http://hdl.handle.net/11336/203684.

Harvard

Scotto, J. E. A. 2022, Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance, American Chemical Society, available at: http://hdl.handle.net/11336/203684 [Accessed 8 Aug. 2026].

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Title
Using Graphene Field-Effect Transistors for Real-Time Monitoring of Dynamic Processes at Sensing Interfaces. Benchmarking Performance against Surface Plasmon Resonance
Author / contributors
Scotto, Juliana et al
Publisher
American Chemical Society
Publication year
2022
ISSN
3988-3996
ISSN
3988-3996
Language
English

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