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Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Stephen J. Pearton et al · SAGE Publishing · 2013

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Author / responsible party
Stephen J. Pearton et al
Publisher
SAGE Publishing
Year
2013
ISSN
1847-9804
ISSN
1847-9804
Language
English

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Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing, glucose detection and hydrogen detection at ppm levels. The wide bandgap materials offer advantages in terms of sensing because of their tolerance to high temperatures, environmental stability and the fact that they are usually piezoelectric. They are also readily integrated with wireless communication circuitry for data transmission.

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APA 7

al, S. J. P. E. (2013). Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors. https://doi.org/10.5772/56188

MLA

al, Stephen J. Pearton et. "Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors." 2013. https://doi.org/10.5772/56188.

Chicago

al, Stephen J. Pearton et. 2013. "Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors.". https://doi.org/10.5772/56188.

Harvard

al, S. J. P. E. 2013, Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors, SAGE Publishing, available at: https://doi.org/10.5772/56188 [Accessed 10 Aug. 2026].

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Title
Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors
Author / contributors
Stephen J. Pearton et al
Publisher
SAGE Publishing
Publication year
2013
ISSN
1847-9804
ISSN
1847-9804
Language
English

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GaN; ZnO; InN
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