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Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors

Intronati, Guido Alfredo et al · Elsevier Science · 2012

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Author / responsible party
Intronati, Guido Alfredo et al
Publisher
Elsevier Science
Year
2012
ISSN
3252-3255
ISSN
3252-3255
Language
English

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We study numerically the effects of an extrinsic spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter. Fil: Intronati, Guido Alfredo. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina Fil: Tamborenea, Pablo Ignacio. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina

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APA 7

Intronati, G. A. E. A. (2012). Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors. http://hdl.handle.net/11336/56106

MLA

Intronati, Guido Alfredo et al. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors." 2012. http://hdl.handle.net/11336/56106.

Chicago

Intronati, Guido Alfredo et al. 2012. "Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors.". http://hdl.handle.net/11336/56106.

Harvard

Intronati, G. A. E. A. 2012, Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors, Elsevier Science, available at: http://hdl.handle.net/11336/56106 [Accessed 8 Aug. 2026].

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Title
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
Author / contributors
Intronati, Guido Alfredo et al
Publisher
Elsevier Science
Publication year
2012
ISSN
3252-3255
ISSN
3252-3255
Language
English

Subjects

Explore related resources through these subjects.

Impurity Band; Metal-Insulator Transition; Semiconductors; Spin Relaxation; https://purl.org/becyt/ford/1.3; https://purl.org/becyt/ford/1
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