Doping of porous activated carbon with Er, a metal with a high electronic states density

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Doping of porous activated carbon with Er, a metal with a high electronic states density

I.M. Budzuliak et al · Vasyl Stefanyk Carpathian National University · 2024

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Author / responsible party

I.M. Budzuliak et al

Publisher

Vasyl Stefanyk Carpathian National University

Year

2024

ISSN

1729-4428

ISSN

1729-4428

Language

English

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The effect of doping porous carbon material (PCM) with erbium, as a metal with a high density of electronic states, on the electrochemical properties of PCM was investigated. It was established that the optimal concentration of introduced erbium 0.2% leads to a significant increase in specific capacity for the devices formed on the basis of erbium-doped carbon material. And the doping of PCM with both erbium (0.2 wt.%) and copper (0.1 wt.%) results not only in the specific capacity increase but also lowers total system impedance.

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APA 7

al, I. B. E. (2024). Doping of porous activated carbon with Er, a metal with a high electronic states density. https://doi.org/10.15330/pcss.25.4.782-786

MLA

al, I.M. Budzuliak et. "Doping of porous activated carbon with Er, a metal with a high electronic states density." 2024. https://doi.org/10.15330/pcss.25.4.782-786.

Chicago

al, I.M. Budzuliak et. 2024. "Doping of porous activated carbon with Er, a metal with a high electronic states density.". https://doi.org/10.15330/pcss.25.4.782-786.

Harvard

al, I. B. E. 2024, Doping of porous activated carbon with Er, a metal with a high electronic states density, Vasyl Stefanyk Carpathian National University, available at: https://doi.org/10.15330/pcss.25.4.782-786 [Accessed 10 Aug. 2026].

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Title: Doping of porous activated carbon with Er, a metal with a high electronic states density

Author / contributors: I.M. Budzuliak et al

Publisher: Vasyl Stefanyk Carpathian National University

Publication year: 2024

ISSN: 1729-4428

ISSN: 1729-4428

Language: English

Subjects

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porous carbon material; erbium; copper; high density of electronic states; specific capacity