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In this paper, the mechanisms of mass transfer to In/CdTe systems under nanosecond pulsed laser irradiation, which are due to nonstationarity, nonequilibrium, physical and geometric nonlinearity, high speed and simultane...

An approach for examination of semiconductor materials thermal conductivity based on the photoacoustical (PA) experimental results has been considered. Attention is drawn to the importance of PA cell design and normaliza...

A technology for direct laser writing of code sequences on modulation disks has been developed and implemented, ensuring high accuracy and reliability in the process of forming structural elements. The main advantages of...

Fundamental absorption edge of (Y0.06Ga0.94)2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed i...

Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates wit...

In the paper, the influence of the electric field and the comprehensive pressure on the conditions of formationand the period of the surface superlattice of adatoms in semiconductors is investigated. It is established th...

Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. T...