Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters
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Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters
Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is...
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