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Atomically thin, two-dimensional, transition-metal dichalcogenide (TMD) monolayers have recently emerged as a versatile platform for optoelectronics. Their appeal stems from a tunable direct bandgap in the visible and ne...

Abstract--The purpose of this study is to determine the characteristics of the transistor before it is used in the circuit. Transistors are semiconductor devices used as amplifiers, as circuit breakers and connectors (sw...

Lead halide perovskites were known to be a prospective family of materials for terahertz (THz) generation. On the other hand, perovskite nanostructures, nanoantennas, and metasurfaces allow tailoring perovskites optical ...

In the paper, the influence of the electric field and the comprehensive pressure on the conditions of formationand the period of the surface superlattice of adatoms in semiconductors is investigated. It is established th...

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0-0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of ...

Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn...

The inherent ability of plasmonic bowtie nanoapertures (NAs) to localize the electromagnetic field at a subwavelength scale was exploited to engineer the H removal process in dilute nitrides at the nanometer level. Dilut...

In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by util...