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Abstract Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. T...

The paper proposes an alternative technology that uses a transistor body modification, whereby a larger  modification provides increased device current during switching, while the slope reduces leakage current during st...

Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect tr...

Materias / palabras clave: Materials science; Graphene; Optoelectronics; Band gap; Transistor; Monolayer; Semiconductor; Electron mobility; Nanotechnology; Silicon; Dielectric; Fabrication

Se trata de realizar una evaluación, a escala de laboratorio, de transistores orgánicos de capa fina (OTFTs) como fototransistores, así como en la detección de variaciones de concentración de iones en soluciones.

The results of design and testing of the CMOS IC 1834VM86 16-bit microprocessor (a functional analogue of the n-channel IC 1810VM86) under exposure to accumulated γ-radiation doses up to 10⁶ rad are presented. The str...

Abstract High-electron-mobility transistors (HEMTs) based on wide bandgap (WBG) materials like gallium nitride (GaN) are vital for next-generation power electronics and high-frequency applications, offering high breakdow...

Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the...

Abstract--The purpose of this study is to determine the characteristics of the transistor before it is used in the circuit. Transistors are semiconductor devices used as amplifiers, as circuit breakers and connectors (sw...

In this study, we investigated the degradation mechanisms of silicon carbide asymmetric trenches of metal-oxide semiconductor field-effect transistors (SiC AT-MOSFETs) under power cycling tests (PCTs). After 60000 cycles...

This paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodolog...

The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different contro...

The article analyzes and outlines the modern principles of the theory of the signaling system of automated design with frequency transformations on a non-reciprocal electronic device - the transistor of ultrahigh frequen...

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large in...