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Abstract Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. T...

The paper proposes an alternative technology that uses a transistor body modification, whereby a larger  modification provides increased device current during switching, while the slope reduces leakage current during st...

Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect tr...

The results of design and testing of the CMOS IC 1834VM86 16-bit microprocessor (a functional analogue of the n-channel IC 1810VM86) under exposure to accumulated γ-radiation doses up to 10⁶ rad are presented. The str...

Abstract High-electron-mobility transistors (HEMTs) based on wide bandgap (WBG) materials like gallium nitride (GaN) are vital for next-generation power electronics and high-frequency applications, offering high breakdow...

Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the...

Abstract--The purpose of this study is to determine the characteristics of the transistor before it is used in the circuit. Transistors are semiconductor devices used as amplifiers, as circuit breakers and connectors (sw...

In this study, we investigated the degradation mechanisms of silicon carbide asymmetric trenches of metal-oxide semiconductor field-effect transistors (SiC AT-MOSFETs) under power cycling tests (PCTs). After 60000 cycles...

This paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodolog...

The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different contro...

The article analyzes and outlines the modern principles of the theory of the signaling system of automated design with frequency transformations on a non-reciprocal electronic device - the transistor of ultrahigh frequen...

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large in...

Abstract The space microgravity environment, scarcely attainable on Earth, is considered to have a positive effect on crystal growth, especially the van der Waals layered materials with low interlayer sliding energy barr...

In this research the application of nanomaterials, nanocomposites reformed in semiconductor and chip sectors by fabricating them resulted in better performance compared to previous studies. These developed materials has ...

A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range. The main aspec...

Amyloids constitute a class of protein and protein fragments believed to be involved in the pathologies associated with Alzheimer’s, Parkinson’s and Creutzfeldt‐ Jakob diseases. These proteins can self‐assemble i...

Abstract The discovery of novel ferroelectric compounds and the modulation of polarization in established ferroelectric materials have persistently represented crucial and highly dynamic areas of research within the fiel...

Abstract Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related chal...